1 C4D10120H silicon carbide schottky diode z -rec ? rectifier features ? 1.2kv schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching ? extremely fast switching ? positive temperature coeffcient on v f ? increased creepage/clearance distance benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies (smps) ? boost diodes in pfc or dc/dc stages ? free wheeling diodes in inverter stages ? ac/dc converters package to-247-2 maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v r dc peak reverse voltage 1200 v i f continuous forward current 31.5 15 10 a t c =25?c t c =135?c t c =155?c fig. 3 i frm repetitive peak forward surge current 46 30 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive forward surge current 67 59 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse fig. 8 i f,max non-repetitive peak forward current 750 620 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse fig. 8 p tot power dissipation 153 66 w t c =25?c t c =110?c fig. 4 dv/dt diode dv/dt ruggedness 200 v/ns v r =0-960v i 2 dt i 2 t value 22.5 17.5 a 2 s t c =25?c, t p =10 ms t c =110?c, t p =10 ms t j , t stg operating junction and storage temperature -55 to +175 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking C4D10120H to-247-2 c4d10120 pin 1 pin 2 case v rrm = 1200 v i f ( t c =135?c) = ?15 a q c = ? 52 nc C4D10120H rev. -, 02-2018
2 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 i f forward current v f forward voltage electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.2 1.8 3 v i f = 10 a t j =25c i f = 10 a t j =175c fig. 1 i r reverse current 30 55 250 350 a v r = 1200 v t j =25c v r = 1200 v t j =175c fig. 2 q c total capacitive charge 52 nc v r = 800 v, i f = 10a d i /d t = 200 a/s t j = 25c fig. 5 c total capacitance 754 45 38 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz fig. 6 e c capacitance stored energy 14.5 j v r = 800 v fig. 7 note:this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit note r jc thermal resistance from junction to case 0.98 c/w fig. 9 typical performance figure 1. forward characteristics figure 2. reverse characteristics 0.00 100.00 200.00 300.00 400.00 500.00 600.00 0 500 1000 1500 2000 i r reverse current (a) v r reverse voltage t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c i f (a) v f (v) v r (v) i r (a) C4D10120H rev. -, 02-2018
3 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 0 20 40 60 80 100 120 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175 figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage typical performance 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 800 0.1 1 10 100 1000 i f(peak) (a) t c ?c t c ?c p tot (w) c (pf) v r (v) q c (nc) v r (v) 10% duty 20% duty 30% duty 50% duty 70% duty dc figure 3. current derating figure 4. power derating C4D10120H rev. -, 02-2018
4 10.0 15.0 20.0 25.0 capacitive energy (uj) 0.0 5.0 0 200 400 600 800 1000 e c capacitive energy (uj) v r reverse voltage (v) typical performance 10 100 1000 1.e-05 1.e-04 1.e-03 1.e-02 i fsm (a) tp(s) 1000 100 10 figure 7. typical capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) t j_initial = 25c t j_initial = 110c v r (v) 25 20 15 10 5 0 0 200 400 600 800 1000 e c ( m j) 1e-05 1e-04 1e-03 1e-02 figure 9. transient thermal impedance 1e-3 10e-3 100e-3 1 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse thermal resistance (?c/w) t (sec) C4D10120H rev. -, 02-2018
5 package dimensions package to-247-2 technologies, inc. recommended solder pad layout pos inches millimeters min max min max a .190 .205 4.70 5.31 a1 .087 .102 2.21 2.59 a2 .059 .098 1.50 2.49 b .039 .055 0.99 1.40 b2 .065 .094 1.65 2.39 c .015 .035 0.38 0.89 d .819 .845 20.80 21.46 d1 .515 - 13.08 - d2 .020 .053 0.51 1.35 e .620 .640 15.49 16.26 e1 .530 - 13.46 - e2 .135 .157 3.43 3.99 e .214 5.44 ?k .010 0.25 l .780 .800 19.81 20.32 l1 - .177 - 4.50 ?p .140 .144 3.56 3.66 ?p1 .278 .291 7.06 7.39 q .212 .244 5.38 6.20 s .243 6.17 w - .006 - 0.15 to-247-2 .4 all units are in inches pin 1 pin 2 case note: recommended soldering profles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering part number package marking C4D10120H to-247-2 c4d10120 C4D10120H rev. -, 02-2018
6 6 diode model diode model note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) v ft = v t +if*r t v t = 0.98+(t j * -1.71*10 -3 ) r t = 0.040+(t j * 5.32*10 -4 ) C4D10120H rev. -, 02-2018 copyright ? 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your wolfspeed representative or from the product ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes related links ? cree sic schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
|
